elektronische bauelemente s9014w npn silicon plastic encapsulated transistor 01-june-2002 rev. a page 1 of 2 top view a l c b d g h j f k e 1 2 3 1 2 3 1 base 2 emitter collector 3 rohs compliant product a suffix of ?-c? specifies halogen & lead-free feature complementary to s9015w packaging information weight: 0.0074 g marking code j6 absolute maximum ratings (at t a = 25 c unless otherwise specified) parameter symbol ratings unit collector to base voltage v cbo 50 v collector to emitter voltage v ceo 45 v emitter to base voltage v ebo 5 v collector current ? continuous i c 100 ma collector power dissipation p c 200 mw junction, storage temperature t j , t stg +150, -55 ~ +150 electrical characteristics (at t a = 25 c unless otherwise specified) parameter symbol min. typ. max. unit test conditions collector-base breakdown voltage v (br)cbo 50 - - v i c = 100 a, i e = 0 collector-emitter breakdown voltage v (br)ceo 45 - - v i c = 0.1ma, i b = 0 emitter-base breakdown voltage v (br)ebo 5 - - v i e = 100 a, i c = 0 collector cut-off current i cbo - - 100 na v cb = 50 v, i e = 0 collector cut-off current i ceo - - 100 na v ce = 35v, i b = 0 emitter cut-off current i ebo - - 100 na v eb = 3v, i c = 0 collector-emitter saturation voltage v ce (sat) - - 300 mv i c = 100ma, i b = 5ma base-emitter saturation voltage v be (sat) - 1000 mv i c = 100ma, i b = 5ma dc current gain h fe 200 - 1000 v ce = 5v, i c = 1ma transition frequency ft 150 - - mhz v ce = 5v, i c = 10ma, f = 30mhz classification of hfe rank l h hfe 200 - 450 450 - 1000 sot-323 millimete r millimete r ref. min. max. ref. min. max. a 1.80 2.20 g 0.100 ref. b 1.80 2.45 h 0.525 ref. c 1.15 1.35 j 0.08 0.25 d 0.80 1.10 k - - e 1.20 1.40 l 0.650 typ. f 0.20 0.40
elektronische bauelemente s9014w npn silicon plastic encapsulated transistor 01-june-2002 rev. a page 2 of 2 characteristic curves
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